Optical energy conversion apparatus

Details Optical energy conversion apparatus Optical energy conversion apparatus

2007-04-03

2007-04-03

Phasge, Arun S. (Department: 1753)

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

C136S255000, C136S258000, C136S261000, C257S053000, C257S065000, C257S066000, C257S458000, C438S096000, C438S097000

Reexamination Certificate

active

10221719

ABSTRACT:
An optical energy conversion apparatus10includes a first impurity doped semiconductor layer5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer6, formed on the first impurity doped semiconductor layer5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer7, admixed with a second impurity and formed on the optically active semiconductor layer6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer6and the second impurity doped semiconductor layer7is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer7, the number of dangling bonds in the second impurity doped semiconductor layer7is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus10.

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