Optical end point detection methods in semiconductor planarizing

Details Optical end point detection methods in semiconductor planarizing Optical end point detection methods in semiconductor planarizing

1994-01-06

1995-05-09

Kunemund, Robert

Fishing, trapping, and vermin destroying

437173, G01D 2100

Patent

active

054139414

ABSTRACT:
A semiconductor processing method of detecting polishing end point from a polishing planarization process includes: a) impinging laser light onto an area of an outermost surface of a semiconductor substrate at an angle of incidence of at least 70.degree. from a line normal relative to the substrate (at least 60.degree. for s-polarized light), the impinged laser light predominantly reflecting off the area as opposed to transmitting therethrough; b) measuring intensity of the light reflected off the area; c) polishing the substrate outermost surface; d) repeating step "a" then step "b"; and e) comparing a prior measured intensity of reflected light with a later measured intensity of reflected light to determine a change in degree of planarity of the semiconductor substrate outermost surface as a result of polishing.

REFERENCES:
patent: 5131752 (1992-07-01), Yu et al.
patent: 5209813 (1993-05-01), Oshida et al.
patent: 5240552 (1993-08-01), Yu et al.
patent: 5271796 (1993-12-01), Miyashita et al.

Affiliated with

Also associated with

Rating

Optical end point detection methods in semiconductor planarizing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical end point detection methods in semiconductor planarizing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical end point detection methods in semiconductor planarizing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1704941