Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-06-29
1999-11-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257184, 257187, 257449, 257462, 257458, 257459, H01L 31075, H01L 31105, H01L 31117
Patent
active
059904909
ABSTRACT:
An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the same integrated circuit. For this optical-electronic integrated circuit, the photo detection circuit is made by a metal-semiconductor-metal process. A current is generated when the photo detection circuit is impinged by photons.
REFERENCES:
patent: 4435610 (1984-03-01), Perlman et al.
patent: 5461246 (1995-10-01), Chou
patent: 5631490 (1997-05-01), Dutta et al.
patent: 5852322 (1998-12-01), Speckbacher
Mintel William
Miracle Technology Co., Ltd.
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