Optical disk with a recording layer composed of tellurium, antim

Details Optical disk with a recording layer composed of tellurium, antim Optical disk with a recording layer composed of tellurium, antim

1991-09-25

1993-08-03

LaRoche, Eugene R.

Dynamic information storage or retrieval

Storage medium structure

Specified material

369100, 365113, G11B 724, G11C 1300

Patent

active

052335992

ABSTRACT:
A rewritable phase change optical disk in which a first dielectric film, a recording film, a second dielectric film and a reflecting film are stacked on a substrate in this order; the recording film having composition defined by a formula Ge.sub.x Sb.sub.y Te.sub.z wherein x, y and z are atomic percentages ranging from 7 to 17, 34 to 44 and 44 to 54, respectively, the x, y and z totalling 100; the recording film having a thickness of 10 to 35 nm; the second dielectric film having a thickness of 5 to 40 nm; the reflecting film being made of one or an alloy of at least Au, Al, Ti, Cr and Ni and having a thickness of 35 nm or more.

REFERENCES:
patent: 3801966 (1974-04-01), Terao
patent: 4656079 (1987-04-01), Yamada et al.
patent: 4670345 (1987-06-01), Morimoto et al.
patent: 4980879 (1990-12-01), Yamada et al.
patent: 5098761 (1992-03-01), Watanabe et al.
patent: 5128099 (1992-07-01), Strand et al.

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