Optical devices with heavily doped multiple quantum wells

Details Optical devices with heavily doped multiple quantum wells Optical devices with heavily doped multiple quantum wells

2005-05-10

2005-05-10

Baumeister, Bradley (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000

Reexamination Certificate

active

06891187

ABSTRACT:
A quantum well structure is provided that includes two or more quantum well layers coupled by at least one barrier layer such that at least one of a piezo-electric field and a pyro-electric field is produced. The quantum well structure is sufficiently doped to cause a Fermi energy to be located between ground states and excited states of the coupled quantum well layers. The quantum well structure can be incorporated into a layered semiconductor to form optical devices such as a laser or optical amplifier.

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patent: 6278134 (2001-08-01), Capasso et al.
patent: 6455870 (2002-09-01), Wang et al.
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