Optical devices with electron-beam evaporated multilayer mirror

Coherent light generators – Particular active media – Semiconductor

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372 96, H01S 319

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active

052068714

ABSTRACT:
This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF.sub.2,MgF.sub.2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF.sub.2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF.sub.2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.

REFERENCES:
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H. Soda et al. "GaInAsP/InP Surface Emitting Injection Lasers with Short Cavity Length," IEEE Journal of Quantum Electronics, vol. QE-19, No. 6 Jun. 1983, pp. 1035-1041.
S. Kinoshita et al. "GaAlAs/GaAs Surface Emitting Laser With High Reflective TiO.sub.2 /SiO.sub.2 Multilayer Bragg Reflector", Japanese Jrnl. Applied Physics, vol. 26, No. 3, Mar. 1987, pp. 410-415.
I. Watanabe, et al. "GaInAsP/InP CBH Surface-Emitting Laser With a Dielectric Multilayer Reflector", Japanese Jrnl. Applied Physics vol. 26, No. 9, Sep. 1987, pp. 1598-1599.
K. Iga et al., "Recent Advances of Surface Emitting Semiconductor Lasers", Optoelectronics, vol. 3, No. 2, Dec. 1988, pp. 131-142.
L. M. Zinkiewicz et al. "High-Power Vertical-Cavity Surface-Emitting AlGaAs/GaAs Diode Lasers", Appl. Phys. Lett. 54 (20, 15 May 1989.

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