Coherent light generators – Particular active media – Semiconductor
Patent
1991-12-27
1993-04-27
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 96, H01S 319
Patent
active
052068714
ABSTRACT:
This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF.sub.2,MgF.sub.2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF.sub.2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF.sub.2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.
REFERENCES:
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Deppe Dennis G.
Dutta Niloy K.
Schubert Erdmann F.
Tu Li-Wei
Zydzik George J.
Alber Oleg E.
AT&T Bell Laboratories
Epps Georgia Y.
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