Optical devices featuring textured semiconductor layers

Details Optical devices featuring textured semiconductor layers Optical devices featuring textured semiconductor layers

2006-10-31

2011-10-11

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S082000, C257S098000, C257S099000, C257S103000, C257SE33012

Reexamination Certificate

active

08035113

ABSTRACT:
A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

REFERENCES:
patent: 4147564 (1979-04-01), Magee et al.
patent: 4342944 (1982-08-01), SpringThorpe
patent: 4664748 (1987-05-01), Ueno et al.
patent: 5040044 (1991-08-01), Noguchi et al.
patent: 5248621 (1993-09-01), Sano
patent: 5309001 (1994-05-01), Watanabe et al.
patent: 5456762 (1995-10-01), Kariya et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5891264 (1999-04-01), Shinohara et al.
patent: 5977477 (1999-11-01), Shiozaki
patent: 5986204 (1999-11-01), Iwasaki et al.
patent: 5990496 (1999-11-01), Kunisato et al.
patent: 6091083 (2000-07-01), Hata et al.
patent: 6099970 (2000-08-01), Bruno et al.
patent: 6133589 (2000-10-01), Krames et al.
patent: 6163038 (2000-12-01), Chen et al.
patent: 6229151 (2001-05-01), Takeuchi et al.
patent: 6252261 (2001-06-01), Usui et al.
patent: 6258618 (2001-07-01), Lester
patent: 6285698 (2001-09-01), Romano et al.
patent: 6291839 (2001-09-01), Lester
patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6328456 (2001-12-01), Mize
patent: 6376864 (2002-04-01), Wang
patent: 6468347 (2002-10-01), Motoki et al.
patent: 6469324 (2002-10-01), Wang
patent: 6486499 (2002-11-01), Krames et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6518598 (2003-02-01), Chen
patent: 6534336 (2003-03-01), Iwane et al.
patent: 6628249 (2003-09-01), Kamikawa et al.
patent: 6649943 (2003-11-01), Shibata et al.
patent: 6733591 (2004-05-01), Anderson
patent: 6870191 (2005-03-01), Niki et al.
patent: 7348600 (2008-03-01), Narukawa et al.
patent: 2001/0000209 (2001-04-01), Krames et al.
patent: 2002/0046693 (2002-04-01), Kiyoku et al.
patent: 2002/0070386 (2002-06-01), Krames et al.
patent: 2002/0074552 (2002-06-01), Weeks, Jr. et al.
patent: 2002/0123163 (2002-09-01), Fujii
patent: 2002/0127751 (2002-09-01), Gardner et al.
patent: 2002/0134985 (2002-09-01), Chen et al.
patent: 2002/0145148 (2002-10-01), Okuyama et al.
patent: 2002/0180351 (2002-12-01), McNulty et al.
patent: 2002/0197764 (2002-12-01), Uemura et al.
patent: 2003/0057444 (2003-03-01), Niki et al.
patent: 2003/0075723 (2003-04-01), Heremans et al.
patent: 2003/0085411 (2003-05-01), Shibata et al.
patent: 2003/0178702 (2003-09-01), Sawaki et al.
patent: 2003/0183827 (2003-10-01), Kawaguchi et al.
patent: 2004/0113163 (2004-06-01), Steigerwald et al.
patent: 2004/0113167 (2004-06-01), Bader et al.
patent: 2005/0095768 (2005-05-01), Tsuda et al.
patent: 2005/0185419 (2005-08-01), Holman et al.
patent: 2006/0054905 (2006-03-01), Schwach et al.
patent: 2006/0175624 (2006-08-01), Sharma et al.
patent: 60173829 (1985-09-01), None
patent: 11-274568 (1999-10-01), None
patent: WO 02/065553 (2002-08-01), None
patent: WO 2005/064666 (2005-07-01), None
Sharma et al., “Outlook for High Efficiency Solar Cells to Be Used With and Without Concentration”, Energy Conyers. Mgmt. vol. 36 (4), 1995 Elsevier Science Ltd., pp. 239-255.
Sun et al., “Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array”, XP-002453008, Opt. Eng. 43 (8) (Aug. 2004), pp. 1700-1701.
Pan et al., “Improvement of InGaN-GaN Light-Emitting Diodes With Surface-Textured Indium-Tin-Oxide Transparent Ohmic Contacts”, XP-002453009, IEEE Photonics Technology Letters, vol. 15 (5), May 2003, pp. 649-651.
Deckman et al; “Molecular-Scale Microporous Superlattices”,MRS Bulletin, 1987, pp. 24-26.
Yamada et al.; “InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode”,The Japan Society of Applied Physics, 41 (2002), pp. L1431-L1433.
Tadatomo et al., “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy”,The Japan Society of Applied Physics, 40 (2001), pp. L583-L585.
Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”,Appl. Phys. Lett., 63, (16), 1993, pp. 2174-2176.
Windisch et al., “Light-Extraction Mechanisms in High-Efficiency Surface-Textured Light-Emitting Diodes”,IEEE Journal on Selected Topics in Quantum Electronics, 8 (2), 2002, pp. 248-255.

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