Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-09-28
1996-10-29
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
359248, 257184, 257 25, H01L 29205, H01L 310304
Patent
active
055699340
ABSTRACT:
An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plurality (at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer having a narrower band gap is made narrower than that of a less deeper quantum well layer having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure.
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J. Lee, et al., "Excitonic spectra of asymmetric, coupled double quantum wells in electric fields," Physical Review B, vol. 39, No. 14, May 1989, pp. 10133-10143.
K. W. Steijn, et al., "Electroabsorption and electrorefraction in GaAs/AlGaAs waveguides containing asymmetric coupled quantum wells," Applied Physics Letters, vol. 55, No. 4, Jul. 4, 1989, pp. 383-385.
Fujii Kazuhito
Ono Takeo
Canon Kabushiki Kaisha
Jackson, Jr. Jerome
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