Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-08-09
1996-05-28
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257 21, 257 96, 257 22, H01L 2906, H01L 3300, H01L 310328
Patent
active
055213979
ABSTRACT:
Layers each consisting of one of two types of compound semiconductors A and B different from each other in a lattice constant a and an energy band gap Eg (a(A)>a(B), Eg(A)<Eg(B)) are stacked in a [111] direction on a compound semiconductor substrate whose major surface is a surface. When each layer consisting of the compound semiconductor A serves as a well layer and each layer consisting of the compound semiconductor B serves as a barrier layer, the barrier layer is formed to have a thickness larger than the critical film thickness of strain relaxation in that barrier layer and is thereby so strained as to be pulled in a direction parallel to a crystal growth surface. The well layer is so strained as to be compressed in the direction parallel to the crystal growth surface owing to partial relaxation of a strain confined in the barrier layer. This can achieve as large an optical bistable effect as possible while maintaining the light blue-shift absorption characteristic.
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Hille Rolf
Olympus Optical Co,. Ltd.
Tran Minhloan
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