Optical device having photoelectric conversion layer

Details Optical device having photoelectric conversion layer Optical device having photoelectric conversion layer

2007-08-27

2010-11-23

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S103000

Reexamination Certificate

active

07838894

ABSTRACT:
An optical device has a photoelectric conversion layer that is formed of a tetrahedral bonded semiconductor, including germanium atoms as main components. A substrate has a lattice constant that is smaller than that of germanium. The plane direction of the substrate is a {111} face. A semiconductor lattice extends in the direction of a <111> axis vertical to the face of the substrate.

REFERENCES:
patent: 6639292 (2003-10-01), Yagi
patent: 2007/0145394 (2007-06-01), Shimizu et al.
patent: 2007/0152234 (2007-07-01), Yamamoto et al.
patent: 2009/0289270 (2009-11-01), Hanawa et al.
patent: 2005-530360 (2005-10-01), None
U.S. Appl. No. 12/617,104, filed Nov. 12, 2009, Yamamoto, et al.
U.S. Appl. No. 12/409,693, filed Mar. 24, 2009, Yamamoto, et al.
U.S. Appl. No. 11/837,932, filed Aug. 13, 2007, Tatsuo Shimizu, et al.
U.S. Appl. No. 11/688,595, filed Mar. 20, 2007, Kazushige Yamamoto, et al.
U.S. Appl. No. 12/207,178, filed Sep. 9, 2008, Yamamoto, et al.

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