Optical device having a quantum-dot structure

Details Optical device having a quantum-dot structure Optical device having a quantum-dot structure

2011-06-28

2011-06-28

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257SE31033, C438S962000

Reexamination Certificate

active

07968863

ABSTRACT:
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).

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Mikkelsen et al.: “Cross-sectional scanning tunneling microscopy studies of novel III-V semiconductor structures” Progress in Surface Science, Oxford, GB, vol. 80, No. 1-2, Jan. 1, 2005.
Levesque et al: “Self-organization of InAs/InP quantum dot multilayers: pseudophase diagram describing the transition from aligned to antialigned structures” Physical Review Letters American Physical Society USA, vol. 100, No. 4, Feb. 1, 2008.
Ouattara et al.: “Correlation Lengths in 1-18 stacked InAs quantum dot systems studied by cross-sectional scanning tunneling microscopy” Nanotechnology IOP Publishing UK, vol. 18, No. 14, Apr. 11, 2007.
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