Optical device having a carrier-depleted layer

Details Optical device having a carrier-depleted layer Optical device having a carrier-depleted layer

2005-06-28

2005-06-28

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S014000, C257S021000

Reexamination Certificate

active

06911713

ABSTRACT:
An EA-DFB module including a DFB laser diode and an EA modulator formed on an InP first-conductivity-type substrate has a mesa stripe, a current blocking structure formed on both side surfaces of the mesa strip and a second InP cladding layer formed on top of the mesa stripe and the current blocking structure. The current blocking structure includes a Fe-doped semi-insulating film, a first conductivity-type buried layer and a carrier-depleted layer. The carrier-depleted layer reduces the parasitic capacitance at the boundary between the first-conductivity-type buried layer and the second InP cladding layer.

REFERENCES:
patent: 5319661 (1994-06-01), Irikawa et al.
patent: 5452315 (1995-09-01), Kimura et al.
patent: 6028875 (2000-02-01), Knight et al.
patent: 6198853 (2001-03-01), Yamada

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