Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2011-07-26
2011-07-26
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S002000, C117S003000, C117S008000, C117S009000, C117S944000
Reexamination Certificate
active
07985294
ABSTRACT:
An optical device and a method of manufacturing the optical device, with the method including the steps of forming a dopant layer on a stoichiometric lithium niobate single crystal substrate with Li to Nb mole composition ratio of 49.5% to 50.5%, and diffusing a dopant in the dopant layer into at least a portion of the stoichiometric lithium niobate single crystal substrate. The stoichiometric lithium niobate single crystal substrate includes 0.5 to 5 mol % of Mg. In the diffusing step, a heat treatment is performed at a diffusion temperature of 1000° C. to 1200° C. for a diffusion time of 3 hours to 24 hours in a dry atmosphere of at least one of O2, N2, Ar and He gas having a dew-point temperature of −35° C. or less.
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Ichikawa Junichiro
Kitamura Kenji
Kondou Katsutoshi
Kurimura Sunao
Nakamura Masaru
Chapman and Cutler LLP
Kunemund Robert M
National Institute for Materials Science
Sumitomo Osaka Cement Co. Ltd.
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