Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-03-11
2010-11-02
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S020000, C257SE21407, C438S034000, C438S038000
Reexamination Certificate
active
07825399
ABSTRACT:
An optical device comprising:a first active stack of layers comprising an optical cavity,at least one quantum dot located in said cavity;an upper contact provided above said optical cavity;a lower contact provided below said cavity,wherein an abrupt material interface defines the whole lateral boundary of said cavity and said cavity is patterned such that it provides two dimensional lateral confinement of photon modes, said upper an lower contacts being arranged such that current can flow vertically across the cavity between the two contacts.
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See Patrick Un Siong
Shields Andrew James
Fahmy Wael M
Ingham John C
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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