Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-04-04
2010-11-23
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S084000, C257S088000, C257S097000, C257S103000, C257SE33026, C257SE33027, C257SE33049
Reexamination Certificate
active
07838890
ABSTRACT:
A method for manufacturing an optical device comprises steps of: (a) laminating a first, a second, a third, a fourth, a fifth, and a sixth semiconductor layers; (b) patterning at least the third, fourth, fifth and sixth semiconductor layers, thereby forming a light emitting device section and a rectification section; (c) forming first and second electrodes for driving the light emitting device section; and (d) connecting the fourth and sixth semiconductor sections between the first and second electrodes in parallel with the light emitting device section so as to have a rectification action in a reverse direction with respect to the light emitting device section, wherein the step (b) includes conducting etching until a portion of a top surface of the third semiconductor layer is exposed.
REFERENCES:
patent: 2005/0167698 (2005-08-01), Hisaka
patent: 2006/0022207 (2006-02-01), Nishida et al.
patent: 2004-006548 (2004-01-01), None
patent: 2006-066845 (2006-03-01), None
patent: 2006-066846 (2006-03-01), None
Nishida Tetsuo
Onishi Hijime
Bryant Kiesha R
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Yang Minchul
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