Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Patent
1993-08-25
1994-11-15
Nelms, David C.
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
257456, 437 5, H01J 4014
Patent
active
053650549
ABSTRACT:
Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.
REFERENCES:
patent: 4409724 (1983-10-01), Tasch, Jr. et al.
patent: 4690714 (1987-09-01), Li
Fathauer Robert W.
Schowalter Leo
Jones Thomas H.
Kusmiss John H.
Le Que T.
Miller Guy M.
Nelms David C.
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