Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-11-22
1996-10-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257 23, 257 25, 257184, H01L 2906, H01L 310328, H01L 310336
Patent
active
055699332
ABSTRACT:
An optical controlled resonant tunneling oscillator utilizing an oscillation variation characteristic of a resonant tunneling oscillator in accordance with a negative differential resistance, a series resistance and a static capacitance varied with an intensity of light when the light is incident on a resonant tunneling device having a double barrier quantum well structure and a method for fabricating the same are disclosed. The oscillator can modulate the frequency 2 or 3 levels in response to an intensity of an incident light as compared with the method of a conventioal photoelectric system that modulates the frequency in response to ON/OFF of an electric signal, thereby simplifying the system. The oscillator controls the resonant tunneling at the high speed by light, thereby enabling processing a signal of tens to hundreds GHz.
REFERENCES:
patent: 5225692 (1993-07-01), Takeuchi et al.
patent: 5229823 (1993-07-01), Tanoue et al.
patent: 5266814 (1993-11-01), Inata et al.
patent: 5416338 (1995-05-01), Suzuki et al.
Phase Locking Between Light Pulses and a Resonant Tunneling Diode Oscillator (Appl. Phys. Lett. 62(1). 4 Jan. 1993) pp. 13, 14 & 15, Lann et al.
Chu Hye-Yong
Park Pyong-Woon
Electronics and Telecommunications Research Institute
Mintel William
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