Optical controlled resonant tunneling diode

Details Optical controlled resonant tunneling diode Optical controlled resonant tunneling diode

1997-11-24

1999-08-17

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 23, 257 24, 257197, H01L 2906

Patent

active

059397292

ABSTRACT:
The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.

REFERENCES:
patent: 5446293 (1995-08-01), Chu et al.
patent: 5606178 (1997-02-01), Schulman et al.

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