Optical control circuit for an optical pnpn thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation

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257 21, 257114, 257167, 257184, 257187, 257918, 307311, H01L 2974, H01L 2906, H01L 31111, H03K 342

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active

056775520

ABSTRACT:
The invention provides an optical functioning device which emits and receives light, and a driver circuit for controlling the device with light. In the device, elements, in which semiconductor multilayer-film reflecting mirrors are provided at both the upper and lower ends of a pnpn structure of semiconductors and which have light-emitting and light-receiving functions to act as optical resonators, are integrated two-dimensionally each with electrodes which are provided for the and the transistors act as phototransistors into which light is introduced.

REFERENCES:
patent: 4864168 (1989-09-01), Kasahara et al.
"Integrated Optical Device of InGaAsP/InP Heterojunction Phototransistor and Inner Stripe Light-Emitting Diode", Akio Sasaki et al, IEEE Transactions on Electron Devices, vol. Ed-32, No. 12 Dec. 12, 1985.
"Surface-emitting Laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity", T. Numai et al., Appl. Phys. Lett. 58(12), 25 Mar. 1991.
"Double heterostructure opteolectronic switch as a dynamic memory with low-power consumption", K. Kasahara et al., Appl. Phys. Lett. 52(9) pp. 679-681, 29 Feb. 1988.
Applied Physics Letters, vol. 58, No. 12, Mar. 25, 1991, pp. 1250-1252, T. Numai et al, "Surface-emitting laser operation in vertical-to-surface transmission electrophontonic devices with a vertical cavity".

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