Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-04-25
2006-04-25
Tran, Mai-Huong (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C359S586000, C264S171100, C156S273700, C438S200000, C257S200000
Reexamination Certificate
active
07033855
ABSTRACT:
The optical component includes a substrate made of a resin material, a silicon oxide film formed on a surface of the substrate, and a multilayer light reflection preventing film formed on the silicon oxide film, and having at least one layer of a low-refractive-index material and at least one layer of a high-refractive-index material being alternately formed. The silicon oxide film is thick and/or formed by introducing oxygen during film forming by vacuum deposition so that a preset elasticity is imparted to the silicon oxide film. Other optical component includes a substrate made of a resin material and a plurality of films formed by vacuum deposition, and directions of internal stresses in each adjacent pair of the plurality of films are different from each other or a thickness of an impurity existing on a surface of the substrate is 0.2 nm or less. The plurality of films are formed by performing melting of film forming materials other than a film forming material for a film formed on the surface of the substrate after the film is formed on the surface of the substrate.
REFERENCES:
patent: 5789476 (1998-08-01), Iryo et al.
patent: 6340404 (2002-01-01), Oka et al.
patent: 6379803 (2002-04-01), Nakamura et al.
patent: 6686049 (2004-02-01), Nakamura et al.
patent: 2002/0051295 (2002-05-01), Oka et al.
Fujinawa Jun
Nakada Junji
Fuji Photo Film Co. , Ltd.
Sughrue & Mion, PLLC
Tran Mai-Huong
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