Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-07-16
1998-12-22
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 372 26, 372 50, 359248, 385130, 385 14, H01L 2906, H01S 319
Patent
active
058523049
ABSTRACT:
A semiconductor photonic integrated circuit and a manufacturing method thereof involving a selective-area growth technique using a set of insulating film patterning masks formed on a semiconductor substrate. The mask width and the mask-to-mask open space width are variable but numerically limited. A single crystal growth process is carried out to form on the same substrate a plurality of contiguous bulk semiconductor layers or quantum well layers differing from one another in terms of growth layer thickness or composition. The differences in energy level between these layers are utilized so that semiconductor photonic integrated devices of different functions are formed on the substrate.
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patent: 5383216 (1995-01-01), Takemi
M. Akoi, et al., "Novel Structure MQW Electroabsorption Modulator/DFB-Laser Integrated Device Fabricated by Selective Area MOCVD Growth," Electronics Letters, vol. 27, No. 23, 1991, pp. 2138-2140.
Central Research Laboratory, Hitachi Ltd.; M. Aoki et al. (1992):An MQW-EA modulator/DFB laser integrated lightsource fabricated by in-plane Eg control in selective area MOCVD growth.
T. Sasaki et al.; Opto-Electronic Research Lab., NEC Corporation, p. 4-161 (1991):Application of MOVPE Selective Growth to Photonic Devices.
Aoki Masahiro
Suzuki Makoto
Takahashi Makoto
Taniwatari Tsuyoshi
Guay John
Hitachi , Ltd.
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