Oscillators – Molecular or particle resonant type
Patent
1977-03-28
1979-07-24
Davie, James W.
Oscillators
Molecular or particle resonant type
330 43, 331 945P, 350 9611, H01S 319
Patent
active
041624602
ABSTRACT:
An energy level due to isoelectronic impurity is provided in the forbidden band of one portion of an optical waveguide in a semiconductor material by doping said portion with an isoelectronic impurity. Upon excitation, a population inversion of electrons and holes is produced in the energy level and the valence band of said portion. When a light having a wavelength corresponding to the energy difference between the level of the isoelectronic impurity and the valence band is impinged on the portion, the incident light is amplified thereby. Since the optical energy of the output is smaller than the forbidden band gap, the attenuation in the waveguide is very small. By arranging Bragg type reflectors on both side portions of the region doped with the isoelectronic impurity, a semiconductor laser having superior selection characteristics of oscillation frequency is provided and the laser beam output thereby is only slightly attenuated in the waveguide due to the fact that the output laser beam is smaller than the forbidden band.
REFERENCES:
patent: 3761837 (1973-09-01), Leheny et al.
patent: 3949315 (1976-04-01), Zeidler
patent: 4057321 (1977-11-01), Mahlein et al.
Gonda et al., "Laser Emission in Nitrogen-Implanted GaAs.sub.1-x P.sub.x (x=0.36 and 0.43)", Japan, J. Appl. Phys., vol. 15 (1976), pp. 567-568.
Gonda et al., "Promotion of Radiative Recombination in GaAs.sub.1-x P.sub.x by N-Ion Implantation", IEEE Trans. Electron Devices, vol. ED22, No. 9, Sep. 1975, pp. 712-716.
Holonyak, Jr. et al., "Photoexcited Resonance-Enhanced Nitrogen-Trap GaAs.sub.1-x P.sub.x : N Laser", IEEE, J. of Quantum Electronics, vol. QE-9, No. 2, Feb. 1973, pp. 379-383.
Won-Tien Tsang et al., "GaAs-Ga.sub.1-x Al.sub.x As Double-Heterostructure Injection Lasers with Distributed Bragg Refectors", Applied Physics Letters, vol. 28, No. 10, May 15, 1976, pp. 596-598.
Agency of Industrial Science & Technology
Davie James W.
Kelman Kurt
LandOfFree
Optical circuit element does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical circuit element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical circuit element will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1289302