Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-11-03
2000-12-05
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257436, 257437, H01L 2978, H01L 3300
Patent
active
061570427
ABSTRACT:
An infrared detector array includes a plurality of detector pixel structures, each of which comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they comprise a diffraction grating for the received infrared radiation. Top and bottom longitudinal contacts are provided on opposite surfaces of the QWIP elongate elements to provide current flow transverse to the axis of the element to provide the required bias voltage. An optical cavity enhancement coating applied to the surface of the elements. The coating can be applied as to fill the space between the elements and extends above the top of the array if desired. The coating may be applied in multiple layers. An infrared radiation reflector is provided to form an optical cavity for receiving infrared radiation. A plurality of detector pixel structures are combined to form a focal plane array. Each detector pixel structure produces a signal that is transmitted through a conductive bump to a terminal of a read out integrated circuit. The group of the signals from the detector pixel structures produces an image corresponding to the received infrared radiation.
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Guay John
Lockheed Martin Corporation
Sadacca Stephen S.
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