Optical cap for semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S082000, C257S099000

Reexamination Certificate

active

06984849

ABSTRACT:
An optical cap for semiconductor device, the cap comprising: a metal cap body having an opening and a transparent optical window sealed with the metal cap body to cover the opening by means of a sealing member. The sealing member includes a bismuth low-melting point glass containing no lead, an intermediate metal layer attached to the metal cap body, the intermediate metal layer being a metal capable of causing a eutectic reaction with respect to Bi contained in the low-melting point glass, and an eutectic alloy layer thus formed between the low-melting point glass and the intermediate metal layer.

REFERENCES:
patent: 6528825 (2003-03-01), Yoshida
patent: 6639248 (2003-10-01), Aizawa et al.
patent: 2003-34549 (2003-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Optical cap for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical cap for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical cap for semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3531918

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.