Optical broadband emitters and methods of making the same

Details Optical broadband emitters and methods of making the same Optical broadband emitters and methods of making the same

2005-12-29

2009-02-03

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S017000, C372S023000, C372S045010, C372S046010

Reexamination Certificate

active

07485892

ABSTRACT:
An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum wells, is described using nano-imprinting of a gel like dielectric layer such as a sol-gel derived SiO2layer into multiple stepped or graded sections to form intermixing cap regions of different thickness. A thermal annealing process is performed to condense the SiO2intermixing cap and induce intermixing. A superluminescent diode is described having multiple electrodes deposited over multiple sections of different bandgaps in which each individual electrode can be either forward or reverse biased to different degrees such that each diode section can individually function as a sub-band spontaneous emitter, an amplifier/attenuator, a photon-absorber, a transparent waveguide, or a photodetector/optical power monitor.

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