Optical bistable devices based on bound exciton nonlinearity

Coherent light generators – Particular component circuitry – Optical pumping

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350354, 372 8, 372 21, G02F 101, G02B 523

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050227416

ABSTRACT:
The I.sub.2 bound exciton in cadmium sulfide (bound to a neutral donor) is a very efficient radiator, providing low switching energy and fast switching times for an ON and OFF optical bistable device, desirable for all-optical signal processing applications. The optical bistable device for light at a given wavelength includes a Fabry-Perot cavity having a pair of opposed mirrored surfaces. A direct bandgap semiconductor, such as CuCl, CdSe, CdS, and GaAs having a bound exciton, is located within the cavity. The cavity is tuned near resonance of the light. The bound exciton has a coefficient of absorption tuned near resonance. A light beam of varying intensity is applied from without the cavity to one of the surfaces. The semiconductor has both an index of refraction and a coefficient of absorption that vary with the magnitude of applied light. Thus, light applied thereto passes through the device either substantially unimpeded or impeded, dependent upon its magnitude.

REFERENCES:
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patent: 4630898 (1986-12-01), Jewell
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Anon, "All-Optical GaAs Chip: Bistable at Room Temperature", Electro-Optical Systems Design, May 1982, p. 12.
Peyghambarian et al., "Optical Nonlinearity and Bistability Due to the Bioexciton Two-Photon Resonance in CuCl", Optical Bistability 2, 1984 (from Optical Bistablity, Jun. 15-17, 1983), pp. 259-266.
Pagenais et al., "Carityless Optical Bistability Due to Light-Induced Absorption in Cadmium Sulfide", Appl. Phys. Lott. 45(3), Aug. 1, 1984, pp. 210-212.
Bohnert et al, "Plasma Induced Optical Nonlinearities and Optical Bistabilition CdS", Z. Phys. B-Condensed Matter 57, No. 4, pp. 263-272, Dec. 1984.
Gibbs et al., "Room Temperature Excitonic Optical Bistability in GaAs-GaAlAs Superlattice Etalon", Appl. Phys. Lett., vol. 41(3), Aug. 1, 1982.

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