Optical arrangement and EUV lithography device with at least...

Details Optical arrangement and EUV lithography device with at least... Optical arrangement and EUV lithography device with at least...

2011-06-14

2011-06-14

Harrington, Alicia M (Department: 2873)

Optical: systems and elements

Mirror

Including specified control or retention of the shape of a...

C359S350000

Reexamination Certificate

active

07959310

ABSTRACT:
An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

REFERENCES:
patent: 5390228 (1995-02-01), Niibe et al.
patent: 6846086 (2005-01-01), Goldstein
patent: 2006/0024589 (2006-02-01), Schwarzl et al.
patent: 2006/0262308 (2006-11-01), Sekine
patent: 10 2004 062 289 (2006-07-01), None
patent: WO 02/054115 (2002-07-01), None
patent: WO 2004/104707 (2004-12-01), None
Michael Bass (Editor), Handbook of Optics, Fundamentals, Techniques and Design, 1995, vol. 1, Second Edition, Chapters 42.7-8, McGraw Hill, New York.

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