Optical amplifier-photodetector assemblage

Details Optical amplifier-photodetector assemblage Optical amplifier-photodetector assemblage

1989-06-26

1991-08-13

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 372 43, 372 50, H01L 3112, H01L 3116

Patent

active

050400339

ABSTRACT:
Briefly, in the invention a photodetector and an optical amplifier are integrated in the same semiconductor chip. The optical amplifier and the photodetector are positioned side-by-side on the same chip. A portion of the electromagnetic energy carried in the evanescent tail of the optical mode is detected by the photodetector for monitoring the average output power of the optical amplifier. Current confinement and lateral index guiding can be provided by Fe or Ti doped semi-insulating layers of InP. The side-by-side arrangement enables the detector to monitor the output power of the optical amplifier without degrading the output power of the optical amplifier.

REFERENCES:
patent: 4470143 (1984-09-01), Kitamura et al.
patent: 4739383 (1988-04-01), Maruska et al.
patent: 4759023 (1988-07-01), Yamaguchi
patent: 4805178 (1989-02-01), Wilt
patent: 4815090 (1989-03-01), Usami et al.
patent: 4947400 (1990-08-01), Dutta
Liou et al., "Monolithic integrated . . . vapor deposition", Appl. Phys. Lett. 54 (2), 1/9/89.
Hsieh, "GaInAsP/InP Lasers . . . at 1.1-1.3 .mu.m", IEEE, 12/1978.

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