Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1989-10-30
1991-05-28
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
455610, 455612, 372 50, H01S 319, H01L 3300
Patent
active
050197878
ABSTRACT:
An optical amplifier comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum wall region therebetween. The clad layers are of a semiconductor material which form a heterojunction with the material of the quantum well region. The clad layers and quantum well region forms a waveguide which extends along the body. A gain section is in the body along the waveguide. The gain section includes a capping layer over the outermost clad layer, a contact on the capping layer and a contact on the other surface of the substrate to allow a voltage to be applied across the gain section. The gain section is adapted to generate light in the active region when a voltage is applied thereacross. A light input section having a grating extending across the body is at one end of the gain section. The light input section is adapted to direct light into the body and along the waveguide. A light output section having a grating extending across the body is at the other end of the gain section. The light output section is adapted to direct the amplified light from the gain section out of the body. The periods of the gratings are such that no self-oscillation of the light in the waveguide occurs.
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Carlson Nils W.
Ettenberg Michael
Evans Gary A.
Hammer Jacob M.
Burke W. J.
David Sarnoff Research Center Inc.
Moskowitz Nelson
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