Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1985-08-06
1988-04-05
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
372 29, 307425, 357 30, H01L 1500, H01S 220
Patent
active
047361646
ABSTRACT:
Light is amplified in a semiconductor laser structure through which a current is passed and (a) the wavelength of the light is greater than the wavelength of maximum gain of the laser structure, or (b) injection locking is avoided, or (c) the current is controlled so as at least partly to compensate for the decrease in the monitored light output at a wavelength or over a wavelength range distinct from that of the emitted amplified signal.
In this way relatively high input powers can be amplified.
REFERENCES:
patent: 3506925 (1970-04-01), Groschwitz
patent: 3724926 (1973-04-01), Lee
patent: 3828231 (1974-08-01), Yamamoto
patent: 4292606 (1981-09-01), Trimmel
patent: 4450564 (1984-05-01), Meuleman et al.
patent: 4577328 (1986-03-01), Yoshihawa et al.
Henning et al, "Performance Predictions . . . Model", IEEE J.Q.E., vol. QC-21, #6, pp. 609-613, 6/85.
Westbrook et al, "Spectral Properties . . . Lower Diodes", IEEE J.Q.E., vol. QE-21, pp. 512-518, 6/85.
Virnik et al, "Natural Frequency . . . Line", Radiophys & Quantum Electron (U.S.A.), vol. 14, #1, 1/71, pp. 135-136.
British Telecommunications PLC
Moskowitz Nelson
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