Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1985-03-19
1987-07-07
Eisenzopf, Reinhard J.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324158R, 324 73R, G01R 3126, G01R 1512
Patent
active
046789898
ABSTRACT:
Optical absorption data for a semiconductor sample is derived by providing a p-type layer (4) of the semiconductor sample between two larger band gap p-type cladding layers (3,5) on an n-type substrate (1). A p-type buffer layer (2) may be present on the substrate (1). Optical radiation is directed towards the p-n junction (6) between the substrate (1) and the buffer layer (2) through a transparent electrode (8) on the outer cladding layer (5). A further electrode (7) contacts the substrate (1) whereby an electric signal can be derived which is related to the voltage generated by the photovoltaic effect at the p-n junction. This signal is indicative of the absorption in the semiconductor sample (4) of the incident radiation in the wavelength range above the absorption edges of both cladding layers and below the wavelength limit at which the p-n junction is sensitive.
REFERENCES:
patent: 3982207 (1976-09-01), Dingle et al.
patent: 4333051 (1982-06-01), Goodman
patent: 4433288 (1984-02-01), Moore
patent: 4438446 (1984-03-01), Tsang
Sell et al, "Optical Absorption and Photoluminescence Studies of Thin GaAs Layers in GaAs-Al.sub.x Ga.sub.1-x As Double Heterostructures", Journal of Applied Physics, vol. 45, No. 2, Feb. 1974, pp. 800-807.
Eisenzopf Reinhard J.
Miller Paul R.
Nguyen Vinh P.
U.S. Philips Corporation
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