Optical absorption enhancement in amorphous silicon deposited on

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

136258, 136259, 29572, 29580, 204192S, 357 2, 357 30, 427 39, 427 74, 427 86, 427290, H01L 3104, H01L 3118

Patent

active

045145822

ABSTRACT:
A thin film semiconductor device with enhanced optical absorption properties and a method for producing it. The device comprises a substrate having at least one sandblasted surface and a thin film of semiconductor material deposited on the sandblasted surface.

REFERENCES:
patent: 2688564 (1954-09-01), Forgue
patent: 4116718 (1978-09-01), Yerkes et al.
patent: 4377723 (1983-03-01), Dalal
patent: 4419533 (1983-12-01), Czubatyj et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Optical absorption enhancement in amorphous silicon deposited on does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical absorption enhancement in amorphous silicon deposited on, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical absorption enhancement in amorphous silicon deposited on will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1969580

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.