Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-05-21
1993-12-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257 80, 257 85, 359248, H01L 2714
Patent
active
052742474
ABSTRACT:
An optic modulator which employs strained multiple quantum well structures which are fabricated and spaced from one another such that the stress perpendicular to the direction of the spacing is released leaving only a uniaxial stress along the direction parallel to the spacing. The multiple quantum well structures are then sandwiched between two optic polarizers which are aligned perpendicular to one another. At zero electric field, polarized light passing from the first polarizer is further polarized such that the polarization of the light is rotated to pass through the second polarizer. When an electric field is applied across the heterostructure, light passing through the heterostructure is not further polarized and therefore, the optic signal is interrupted. Thus, optic signals may be modulated with the contrast of polarizing modulators at the speed of superlattice heterostructures.
REFERENCES:
patent: 3464762 (1969-09-01), Kahng
patent: 4514056 (1985-04-01), Azgapetian
patent: 5130762 (1992-07-01), Kulick
H. Shen et al., "Biaxial and uniaxial stress in gallium aresenide on sili: A linear polarized photoluminescence study", J. Appl. Phys. 68(1), Jul. 1, 1990, 1990 American Institute of Physics, pp. 369-371.
D. H. Rich et al., "Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/Si", Physical Review B, vol. 43, No. 8, Mar. 15, 1991-I, pp. 6836-6839.
Dutta Mitra
Pamulapati Jagadeesh
Shen Hongen
Anderson William H.
Mintel William
The United States of America as represented by the Secretary of
Zelenka Michael
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