Opposed terminal structure having a nitride semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S099000

Reexamination Certificate

active

07049635

ABSTRACT:
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.

REFERENCES:
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6627921 (2003-09-01), Wong et al.
patent: 6744071 (2004-06-01), Sano et al.
patent: 6878563 (2005-04-01), Bader et al.
patent: 2002/0017652 (2002-02-01), Illek et al.
patent: 9-8403 (1997-01-01), None
patent: 09-129932 (1997-05-01), None
patent: 10-117016 (1998-05-01), None
patent: 11-214744 (1999-08-01), None
patent: 2000-196152 (2000-07-01), None
patent: 2001-284641 (2001-10-01), None
patent: 2001-298214 (2001-10-01), None
patent: 2001-313422 (2001-11-01), None
patent: 01/82384 (2001-11-01), None

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