Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-05-23
2006-05-23
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S099000
Reexamination Certificate
active
07049635
ABSTRACT:
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
REFERENCES:
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6627921 (2003-09-01), Wong et al.
patent: 6744071 (2004-06-01), Sano et al.
patent: 6878563 (2005-04-01), Bader et al.
patent: 2002/0017652 (2002-02-01), Illek et al.
patent: 9-8403 (1997-01-01), None
patent: 09-129932 (1997-05-01), None
patent: 10-117016 (1998-05-01), None
patent: 11-214744 (1999-08-01), None
patent: 2000-196152 (2000-07-01), None
patent: 2001-284641 (2001-10-01), None
patent: 2001-298214 (2001-10-01), None
patent: 2001-313422 (2001-11-01), None
patent: 01/82384 (2001-11-01), None
Kamada Kazumi
Nonaka Mitsuhiro
Sano Masahiko
Yamamoto Masashi
Nichia Corporation
Prenty Mark V.
Wenderoth , Lind & Ponack, L.L.P.
LandOfFree
Opposed terminal structure having a nitride semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Opposed terminal structure having a nitride semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Opposed terminal structure having a nitride semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3575701