Opposed gate-source transistor

Details Opposed gate-source transistor Opposed gate-source transistor

1988-01-15

1990-08-21

Hille, Rolf

357 4, 357 55, 357 81, H01L 2980, H01L 2712, H01L 2906, H01L 2302

Patent

active

049510991

ABSTRACT:
A field-effect transistor (FET) and a corresponding method for its fabrication, the transistor having a source and a gate located at opposite faces of an active channel region formed in a substrate, the source being substantially shorter in effective length than the gate and located symmetrically with respect to the gate. The transistor also has two drains, located one at each end of the channel region, and charge carriers flow from the source to the drains in two paths, under control of the same gate. Electrical contact with the source is made from beneath the substrate, while contact with the gate and drains is made from above. The resulting device has a large incremental transconductance and relatively small parasitic impedances, and therefore can operate at much higher frequencies than conventional FET's.

REFERENCES:
patent: 4141021 (1979-02-01), Decker
patent: 4236166 (1980-11-01), Cho et al.
patent: 4249190 (1981-02-01), Cho
A. Cho et al., "L-N H-P GaAs Microwave FET . . . Epitaxy," J.A.P. vol. 48#1, Jan. 1977, pp. 346-349.

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