Operational amplifier using bipolar junction transistors in sili

Details Operational amplifier using bipolar junction transistors in sili Operational amplifier using bipolar junction transistors in sili

1993-05-20

1994-12-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 84, 437247, 148DIG150, 148DIG77, H01L 21265

Patent

active

053745671

ABSTRACT:
A method for fabricating low leakage current bipolar junction transistors of silicon-on-sapphire for efficient use in operational amplifiers utilizes all implant technology, improved silicon conditioning processing, and low temperature annealing.

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Anil Gupta and Prahalad K. Vasudev, "Recent Advances in Hetero-Epitaxial Silicon-On-Insulator Technology", Solid State Technology, Feb. 1983, pp. 104-109.
Tomoyasu Inoue and Toshio Yoshii, "Crystalline Reduction and Defect-Type Change in Silicon On Sapphire Films by Silicon Implantation and Subsequent Thermal Annealing", Appl. Phys. Lett., vol. 36, No. 1, 1 Jan. 1980, pp. 64-65.
Anil Gupta, "Recent Advances in Hetero-Epitaxial Silicon-on-Insulator Technology", Solid State Technology, Jun. 1983, pp. 129-134.

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