Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With integrated trigger signal amplification means
Reexamination Certificate
2005-01-21
2008-11-18
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With integrated trigger signal amplification means
C257S115000, C257S123000, C257S157000, C257S158000, C257S160000, C327S052000, C327S089000, C327S246000, C327S247000, C327S280000, C327S287000, C327S359000, C327S563000
Reexamination Certificate
active
07453104
ABSTRACT:
In an operational amplifier including first and second power supply terminals, first and second input terminals, and a first and second output terminals, a first differential amplifier circuit includes first and second MOS transistors with a common source connected to a first tail current source, first and second load resistors and a first non-doped MOS transistor connected between the first and second resistors and the second power supply terminal. A second differential amplifier circuit includes third and fourth MOS transistors with a common source connected to a second tail current source, third and fourth load resistors and a second non-doped MOS transistor connected between the third and fourth load resistors and the second power supply terminal. A first output circuit includes a fifth MOS transistor with a gate connected to the drain of the second MOS transistor, and a sixth MOS transistor with a gate and a drain connected to the drain of the fifth MOS transistor, and a second output circuit includes a seventh MOS transistor with a gate connected to the drain of the first MOS transistor, and an eighth MOS transistor with a gate and a drain connected to the drain of the seventh MOS transistor. A first intermediate circuit is connected between the drain of the third MOS transistor and the gate of the sixth MOS transistor, and a second intermediate circuit is connected between the drain of the fourth MOS transistor and the gate of the eighth MOS transistor.
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Dang Phuc T
McGinn IP Law Group PLLC
NEC Electronics Corporation
Tran Thanh Y
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