Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-11-26
2009-11-03
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185050, C365S189011
Reexamination Certificate
active
07613045
ABSTRACT:
A memory device generates one or more read reference voltages rather than being explicitly supplied with each read reference voltage from an external host controller. The technique involves providing a command to the memory device that causes a reading of a set of storage elements by the memory device using a reference voltage which is different than a reference voltage used in a previous reading, where the new read reference value is not explicitly set outside the memory device. In one implementation, the memory device is provided with an initial reference voltage and a step size for generating additional reference voltages. The technique can be used, e.g., in determining a threshold voltage distribution of a set of storage elements. In this case, a voltage sweep can be applied to a word line associated with the set of storage elements, and data obtained based on the number of conductive storage elements.
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Lasser Menahem
Murin Mark
Shlick Mark
Trinh Cuong
SanDisk Corporation
SanDisk iL, Ltd.
Vierra Magen Marcus & DeNiro LLP
Yoha Connie C
LandOfFree
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