Operation method of non-volatile memory

Details Operation method of non-volatile memory Operation method of non-volatile memory

2006-11-09

2008-10-07

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

07433243

ABSTRACT:
A non-volatile memory formed on a first conductive type substrate is provided. The non-volatile memory includes a gate, a second conductive type drain region, a charge storage layer, and a second conductive type first lightly doped region. The gate is formed on the first conductive type substrate. The second conductive type drain region is formed in the first conductive type substrate at the first side of the gate. The charge storage layer is formed on the first conductive type substrate at the first side of the gate and between the second conductive type drain region and the gate. The second conductive type first lightly doped region is formed in the first conductive type substrate at the second side of the gate. The second side is opposite to the first side.

REFERENCES:
patent: 6667510 (2003-12-01), Wu
patent: 6862251 (2005-03-01), Yaoi et al.
patent: 6992925 (2006-01-01), Peng
patent: 2002/0142535 (2002-10-01), Ho et al.
patent: 2003/0156460 (2003-08-01), Wu

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