Operating method of non-volatile memory

Details Operating method of non-volatile memory Operating method of non-volatile memory

2011-03-08

2011-03-08

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S184000, C365S185280, C365S185290

Reexamination Certificate

active

07903472

ABSTRACT:
An operating method of a non-volatile memory adapted for a non-volatile memory disposed on an SOI substrate including a first conductive type silicon body layer is provided. The non-volatile memory includes a gate, a charge storage structure, a second conductive type drain region, and a second conductive type source region. In operating such a non-volatile memory, voltages are applied to the gate, the second conductive type drain region, the second conductive type source region and the first conductive type silicon body layer beneath the gate, to inject electrons or holes in to the charge storage structure or evacuate the electrons from the charge storage structure by a method selected from a group consisting of channel hot carrier injection, source side injection, band-to-band tunnelling hot carrier injection and Fowler-Nordheim (F-N) tunnelling.

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