Operating method of multi-level memory cell

Details Operating method of multi-level memory cell Operating method of multi-level memory cell

2008-01-22

2010-12-14

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185030, C365S185240

Reexamination Certificate

active

07852680

ABSTRACT:
An operating method of a memory cell is described, wherein the memory cell has a plurality of threshold voltages. The operating method includes programming the cell from an initial state to a programmed state. The initial state is an erased state having a threshold voltage between the lowest threshold voltage and the highest one among the plurality of threshold voltages.

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