Open-tube, benign-environment annealing method for compound semi

Details Open-tube, benign-environment annealing method for compound semi Open-tube, benign-environment annealing method for compound semi

1988-06-27

1990-02-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG3, 148DIG5, 148DIG22, 148DIG84, 437 26, 437247, 437734, 437945, 437949, 437987, H01L 21265

Patent

active

048988340

ABSTRACT:
An improved system and method for annealing indium antimonide ion implanted junctions employing an open-tube benign annealing environment. A furnace having a hollow chamber therein is maintained continuously at a predetermined annealing temperature and wafers of indium antimonide to be annealed are inserted into the chamber through a resealable airlock at one end of the chamber. A source of molten indium saturated with antimony is provided within the chamber to maintain desired partial pressures of indium and antimony within the chamber. Hydrogen gas is continuously flushed through the chamber to purge contaminants and maintain the chamber at a desired slight overpressure over atmospheric. At the conclusion of annealing, the indium antimonide wafer is removed from the chamber into the airlock which is flushed with hydrogen gas. The wafer is allowed to cool to room temperature and removed from the airlock for subsequent processing steps.

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Kasahara et al., "Effect of Arsenic Partial Pressure on Capless Anneal of Ion--Implanted GaAs," J. Electrochem. Soc., vol. 126, No. 11, Nov. 1979, pp. 1997-2001.

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