Open tube aluminum oxide disc diffusion

Details Open tube aluminum oxide disc diffusion Open tube aluminum oxide disc diffusion

1979-05-21

1980-12-16

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148190, 252950, 252951, H01L 21223

Patent

active

042395607

ABSTRACT:
A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.

REFERENCES:
patent: 3314833 (1967-04-01), Arndt et al.
patent: 3374125 (1968-03-01), Goldsmith
patent: 3577287 (1971-05-01), Norwich et al.
patent: 3644154 (1972-02-01), Hoogendoorn et al.
patent: 3834349 (1974-09-01), Dietze et al.
patent: 3842794 (1974-10-01), Ing
patent: 3939017 (1976-02-01), Ryugo et al.
patent: 4040878 (1977-08-01), Rowe
patent: 4141738 (1979-02-01), Rapp

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