Open tube aluminum diffusion

Details Open tube aluminum diffusion Open tube aluminum diffusion

1978-09-05

1980-11-25

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, H01L 21223

Patent

active

042356504

ABSTRACT:
A method for forming a p-conductivity type layer in a semiconductor wafer using aluminum as a diffusion source and which can be carried out in an open diffusion tube is described. A variety of aluminum sources can be employed in an open tube. A stream of essentially oxygen-free inert gas provides transport for the dopant and prevents the entry of potentially contaminating ambient into the tube.

REFERENCES:
patent: 3589953 (1971-06-01), Traxler
patent: 3615945 (1971-10-01), Yokozawa
patent: 3852128 (1974-12-01), Kreuzer
patent: 3972838 (1976-08-01), Yamashita et al.
patent: 3997379 (1976-12-01), Rosnowski

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