Open-loop method and system for controlling growth of semiconduc

Details Open-loop method and system for controlling growth of semiconduc Open-loop method and system for controlling growth of semiconduc

1998-04-01

1999-10-19

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117 16, 117 30, C30B 1520

Patent

active

059682639

ABSTRACT:
An open loop control method for use with an apparatus for growing a silicon single crystal having a zero dislocation state and an improved diameter and growth rate uniformity in accordance with the Czochralski process. According to the invention, a heat and mass transfer model based on the silicon charged to a crucible is determined as a function of one or more reference parameters. The reference parameter values are determined from the growth of a reference silicon single crystal. A power profile is then determined as a function of the heat and mass transfer model for a given pull rate profile and model diameter profile. The power profile generated is representative of the power supplied to a heater for providing an amount of thermal energy to the crucible for substantially maintaining a thermal equilibrium at the interface between the melt and the crystal. Finally, the crystal growing apparatus is controlled during the growth of at least a portion of the silicon single crystal by adjusting the thermal energy provided to the crucible by the heater in accordance with the power profile.

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