Open base bipolar transistor protective device

Details Open base bipolar transistor protective device Open base bipolar transistor protective device

1979-06-27

1981-09-22

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 36, 357 46, 307250, 307299B, 307303, 361111, 307542, H01L 2990

Patent

active

042913195

ABSTRACT:
A transistor, used in the switching of current in an inductive load, is protected by a similar transistor connected between collector and base. The protective transistor has a lower breakdown voltage than the transistor being protected. When the inductive load produces a voltage surge, the protective transistor breaks down first and turns the protected transistor on so that the surge is absorbed in an active transistor not in breakdown and therefore capable of dissipating the surge without damage. Since the surge is arrested at high voltage the time required to complete the arrest is shortened.

REFERENCES:
patent: 3435295 (1969-03-01), Ladd et al.
patent: 3742319 (1973-06-01), Bryan et al.
patent: 3821780 (1974-06-01), Harland et al.
W. Wu, "Resistor-Transistor Clamp," IBM Tech. Discl. Bull., vol. 10, #7, Dec. 1967, p. 1038.
Heathkit Assembly Manual for Oscilloscope IO-102, Heath Co., Benton Harbor, Mich., 1971, pp. 81, 89.

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