One-transistor storage element and a process for the production

Details One-transistor storage element and a process for the production One-transistor storage element and a process for the production

1978-09-18

1980-06-17

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 307238, 29571, H01L 2710

Patent

active

042086701

ABSTRACT:
A one-transistor storage element system and a method for producing the same is disclosed wherein each storage element has a sselector field effect transistor and a storage capacitor. A doped semiconductor layer is provided having an oppositely doped bit line provided at a surface thereof, an oppositely doped source zone connecting to the bit line by an oppositely doped connecting zone, and an oppositely doped drain zone also provided at a surface of the semiconductor layer. An insulating layer is provided over the surface of the semiconductor layer and an electrically conductive coating is provided thereon. A first separate part of the conductive coating forms a word line which is positioned over a gap between the source and drain zones. Portions of the word line form a gate beneath which a channel of the transistor is formed. A second separate part of the electrically conductive coating is formed over a portion of the semiconductor layer adjacent the drain zone and forms one of the electrodes of the storage capacitor. The other electrode of the storage capacitor is either provided as a diffusion zone in the semiconductor layer or may be an induced zone. A reference potential line formed by a connecting third part of the electrical conductive layer is also provided.

REFERENCES:
patent: 3997799 (1976-12-01), Boher
patent: 4139786 (1979-02-01), Raymond
patent: 4150389 (1979-04-01), Roessler
Stein, IEEE Journ. of Solid State Circuits, vol. SC-8, No. 5, Oct. 1973.

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