Static information storage and retrieval – Floating gate – Particular biasing
Patent
1988-09-22
1990-09-18
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
365218, G11C 1140
Patent
active
049583212
ABSTRACT:
An electrically programmable floating gate transistor useful as a one transistor flash EPROM cell includes a multi-thickness dielectric provided on a substrate. The multi-thickness dielectric limits tunnelling from a floating gate provided on the multi-thickness dielectric to a drain during programming and allowing tunnelling from the floating gate to the source during erasing. The floating gate has a low doping concentration, less than 5.times.10.sup.18 cm.sup.-3, and a thickness of less than 1000 .ANG. to provide a self-limiting erase characteristic.
REFERENCES:
patent: 4409723 (1983-10-01), Harari
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4811078 (1989-03-01), Tigelaar et al.
"A 128K Flash EEPROM Using Double-Polysilicon Technology", Samachisa et al., IEEE Journal of Solid State Circuits, vol. SC-22, No. 5, 10/87.
"Corner-Field Induced Drain Leakage in Thin Oxide MOSFETS", Chang et al., Advanced Micro Devices, IEEE IEDM 87, p. 714.
"Flash-Erase EEPROM Cell with Asymmetric Source and Drain Structure", H. Kume et al., Central Research Laboratory, Hitachi, Ltd., IEEE IEDM 87, p. 560.
"An In System Reprogrammable 256K CMOS Flash Memory", Virgil Niles, Kynett et al., Intel Corp. 1988, IEEE Int'l Solid State Conference.
"A High Density CMOS I-T Electrically Erasible Non-Volatile (Flash) Memory Technology", S. Tam et al., Intel Corp.
"Reliability Performance of ETOX Based Flash Memories", Verma et al., Intel Corp. 1988, IEEE/IRPS.
"A Single Transistor EEPROM Cell and its Implementation in a 512K CMOS EEPROM", Mukherjee et al., IEEE IDFM 85, p. 616.
Advanced Micro Devices , Inc.
Fears Terrell W.
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