Patent
1983-08-26
1985-08-20
Edlow, Martin H.
357 231, 357 236, 357 237, 357 4, H01L 2934
Patent
active
045367850
ABSTRACT:
A dynamic random access memory cell including a storage capacitor defined by an electrode and dielectric layers on both sides of said electrode and a transistor for controlling the charge on said storage capacitor.
REFERENCES:
patent: 2773250 (1956-12-01), Aigrain et al.
patent: 3566217 (1971-02-01), Cooper
patent: 3969753 (1976-07-01), Thorsen, Jr. et al.
patent: 4250569 (1981-02-01), Sasaki et al.
patent: 4371955 (1983-02-01), Sasaki
patent: 4462090 (1984-07-01), Iizuka
R. D. Jolly et al., IEEE Electron Device Letters, vol. EDL-4, No. 1, Jan. 1983.
Brown Lamarr A.
Edlow Martin H.
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