One-time, voltage-programmable, logic element

Details One-time, voltage-programmable, logic element One-time, voltage-programmable, logic element

1993-08-31

1994-07-19

Nguyen, Viet Q.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

365 96, 3652257, 257530, 257 2, G11C 1716

Patent

active

053311965

ABSTRACT:
A one-time, voltage-programmable, logic element has an antifuse element constructed within a trench etched in a silicon substrate. A sidewall of the trench abuts a diffusion region. The trench is lined with a nitride dielectric layer, which is in turn covered by polycrystalline silicon. The polycrystalline silicon serves as a voltage reference line. In a preferred embodiment, the diffusion region forms a first source/drain region of a field-effect transistor. In order to program the element, a voltage sufficient to rupture the nitride dielectric layer is applied between the diffusion region and the reference line. The transistor is utilized to isolate a particular logic element from other logic elements.

REFERENCES:
patent: 4970686 (1990-11-01), Naruke et al.
patent: 5134457 (1992-07-01), Hamdy et al.
patent: 5241496 (1993-08-01), Lowrey et al.

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